| 发明名称 |
RESISTIVE RANDOM ACCESS MEMORY |
| 摘要 |
A resistive random access memory including two electrode layers and a multi-resistance layer mounted between the two electrode layers. The multi-resistance layer consists essentially of insulating material with oxygen and lithium ions. The number of resistance states of a memory element can be increased by the resistive random access memory to increase the integration density of a memory module having a plurality of memory elements. |
| 申请公布号 |
US2016111640(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414559112 |
申请日期 |
2014.12.03 |
| 申请人 |
NATIONAL SUN YAT-SEN UNIVERSITY |
发明人 |
Chang Ting-Chang;Chang Kuan-Chang;Tsai Tsung-Ming;Chu Tian-Jian;Pan Chih-Hung |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resistive random access memory comprising:
two electrode layers; and a multi-resistance layer mounted between the two electrode layers, with the multi-resistance layer consisting essentially of insulating material with oxygen and lithium ions. |
| 地址 |
Kaohsiung TW |
