| 发明名称 |
GATE LAST SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME |
| 摘要 |
A semiconductor structure and a method for forming the same are provided. The semiconductor structure includes a substrate and a metal gate structure formed over a fin structure of the substrate. The semiconductor structure further includes a spacer formed on a sidewall of the metal gate structure and a source/drain structure formed in the fin structure. In addition, the spacer is in direct contact with the fin structure. |
| 申请公布号 |
US2016111541(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414517272 |
申请日期 |
2014.10.17 |
| 申请人 |
Taiwan Semiconductor Manufacturing Co., Ltd. |
发明人 |
CHANG Che-Cheng;LIN Chih-Han;LIN Jr-Jung |
| 分类号 |
H01L29/78;H01L21/3213;H01L21/311;H01L29/49;H01L29/66 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a substrate; a metal gate structure formed over a fin structure of the substrate; a spacer formed on a sidewall of the metal gate structure; and a source/drain structure formed in the fin structure, wherein the source/drain structure has an extending portion extending into a recess of the spacer. |
| 地址 |
Hsin-Chu TW |
