SOURCE/DRAIN CONTACTS FOR NON-PLANAR TRANSISTORS

摘要

The present description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to the formation of source/drain contacts within non-planar transistors, wherein a titanium-containing contact interface may be used in the formation of the source/drain contact with a discreet titanium silicide formed between the titanium-containing interface and a silicon-containing source/drain structure.

主权项

1. An apparatus, comprising:
a fin comprising silicon; a non-planar gate electrode over at least a portion of the fin; a first spacer on a first side of the gate electrode; a second spacer on a second side of the gate electrode; a first dielectric material, the first spacer being between the gate electrode and at least a portion of the first dielectric material; a cap dielectric layer above the gate electrode, at least a portion of the first dielectric material being below the cap dielectric layer; a second dielectric layer above the cap dielectric layer; a source region at least partially in the fin, the source region comprising silicon and at least one other element; a silicide region on the source region, the silicide region comprising silicon and titanium and being at least substantially free from nickel; a source contact that is in contact with at least a portion of the second dielectric layer, at least a portion of the cap dielectric layer, and at least a portion of the first dielectric material, the source contact comprising:
an interface layer on a bottom and sides of the contact, the contact interface layer comprising titanium and nitrogen; anda contact fill material, the contact fill material comprising tungsten, the interface layer being between at least a portion of the contact fill material and the silicide region at the bottom of the contact, and the interface layer being between at least a portion of the fill material and at least a portion of the first dielectric material at the sides of the contact, and the interface layer further being between at least a portion of the contact fill material and at least a portion of the second dielectric material at the sides of the contact; and wherein, in at least one cross section through the fin, all of the silicide region is under the source contact.