| 发明名称 |
METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE HAVING A DRAIN SIDE DUMMY CONTACT |
| 摘要 |
A MOS transistor device includes a substrate including a gate formed thereon, and a spacer being formed on a sidewall of the gate; a source region and a drain region formed in the substrate; and at least a first dummy contact formed above the substrate on a drain side of the gate. More important, the first dummy contact is formed apart from a surface of the substrate. |
| 申请公布号 |
US2016111509(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414519153 |
申请日期 |
2014.10.21 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Yu Kun-Huang;Hsiao Shih-Yin |
| 分类号 |
H01L29/423;H01L29/78;H01L29/06;H01L29/66 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal-oxide-semiconductor (MOS) device comprising:
a substrate comprising a gate formed thereon, and a spacer being formed on sidewalls of the gate; a gate contact electrically connected to the gate; a source region and a drain region formed in the substrate; and at least a first dummy contact formed above the substrate on a drain side of the gate, the first dummy contact being formed apart from a surface of the substrate, and the first dummy contact being electrically connected to the gate contact. |
| 地址 |
Hsin-Chu City TW |
