EXTREME HIGH MOBILITY CMOS LOGIC

摘要

A CMOS device includes a PMOS transistor with a first quantum well structure and an NMOS device with a second quantum well structure. The PMOS and NMOS transistors are formed on a substrate.

主权项

1. A transistor, comprising:
a doped silicon semi-insulating substrate; a buffer layer disposed above the doped silicon semi-insulating substrate; a bottom barrier layer disposed above the buffer layer wherein the bottom barrier layer comprises a material different than the buffer layer; a group III-V material quantum well layer disposed above the bottom barrier layer; a top barrier layer disposed above the group III-V material quantum well layer; a gate stack disposed above the top barrier layer, the gate stack comprising:
a high-k gate dielectric layer disposed above the top barrier layer; anda metal gate electrode disposed above the high-k gate dielectric layer; and raised source and drain regions disposed above an etch stop layer disposed above the top barrier layer, the raised source and drain regions disposed on either side of the gate stack.