| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device includes a substrate having an active region, a first gate structure over a top surface of the substrate, a second gate structure over the top surface of the substrate, a pair of first spacers on each sidewall of the first gate structure, a pair of second spacers on each sidewall of the second gate structure, an insulating layer over at least the first gate structure, a first conductive feature over the active region and a second conductive feature over the substrate. Further, the second gate structure is adjacent to the first gate structure and a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature. |
| 申请公布号 |
US2016111370(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414515276 |
申请日期 |
2014.10.15 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
HSIEH Tung-Heng;ZHUANG Hui-Zhong;LIN Chung-Te;CHIANG Ting-Wei;WANG Sheng-Hsiung;TIEN Li-Chun |
| 分类号 |
H01L23/535;H01L29/40;H01L21/768;H01L27/088 |
主分类号 |
H01L23/535 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate having an active region; a first gate structure over a top surface of the substrate; a second gate structure over the top surface of the substrate, wherein the second gate structure is adjacent to the first gate structure; a pair of first spacers on each sidewall of the first gate structure; a pair of second spacers on each sidewall of the second gate structure; an insulating layer over at least the first gate structure; a first conductive feature over the active region; and a second conductive feature over the substrate, wherein a top surface of the first conductive feature is coplanar with a top surface of the second conductive feature. |
| 地址 |
Hsinchu TW |
