| 发明名称 |
CMP POLISHING SOLUTION AND POLISHING METHOD USING SAME |
| 摘要 |
A CMP polishing liquid for polishing a ruthenium-based metal, comprising polishing particles, an acid component, an oxidizing agent, a triazole-based compound, a quaternary phosphonium salt and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and the pH of the CMP polishing liquid is 3.0 or more and less than 7.0. |
| 申请公布号 |
US2016107286(A1) |
申请公布日期 |
2016.04.21 |
| 申请号 |
US201414786928 |
申请日期 |
2014.04.24 |
| 申请人 |
HITACHI CHEMICAL COMPANY, LTD. |
发明人 |
SAKASHITA Masahiro;HANANO Masayuki;MISHIMA Kouji |
| 分类号 |
B24B37/04;C09G1/02 |
主分类号 |
B24B37/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A CMP polishing liquid for polishing a ruthenium-based metal, comprising:
polishing particles; an acid component; an oxidizing agent; a triazole-based compound; a quaternary phosphonium salt; and water, wherein the acid component contains at least one selected from the group consisting of inorganic acids, monocarboxylic acids, carboxylic acids having a plurality of carboxyl groups and having no hydroxyl group, and salts thereof, the polishing particles have a negative zeta potential in the CMP polishing liquid, and a pH of the CMP polishing liquid is 3.0 or more and less than 7.0. |
| 地址 |
Tokyo JP |
