HIG MOBILITY DEVICES WITH ANTI-PUNCH THROUGH LAYERS AND METHODS OF FORMING SAME

摘要

A semiconductor device for preventing leakage and fluctuation in device characteristic according to an embodiment includes a fin which is extended from a semiconductor substrate upwards. The fin includes an APT layer having anti-punch through (ATP) dopants, and a channel region on the APT layer. The channel region practically has no APT dopants. The semiconductor device further includes a conductive gate stack on the sidewall and upper surface of the channel region.