发明名称 |
Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations |
摘要 |
Method and devices are disclosed for device manufacture of gallium nitride devices by growing a gallium nitride layer on a silicon substrate using Atomic Layer Deposition (ALD) followed by rapid thermal annealing. Gallium nitride is grown directly on silicon or on a barrier layer of aluminum nitride grown on the silicon substrate. One or both layers are thermally processed by rapid thermal annealing. Preferably the ALD process use a reaction temperature below 550 °C and preferable below 350°C. The rapid thermal annealing step raises the temperature of the coating surface to a temperature ranging from 550 to 1500°C for less than 12 msec. |
申请公布号 |
GB2531453(A) |
申请公布日期 |
2016.04.20 |
申请号 |
GB20160000309 |
申请日期 |
2014.06.25 |
申请人 |
ULTRATECH, INC. |
发明人 |
ANDREW HAWRYLUK;GANESH SUNDARAM;RITWIK BHATIA |
分类号 |
H01L21/02;B23K26/03;H01L21/268 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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