| 摘要 |
PROBLEM TO BE SOLVED: To provide an oxide sintered body capable of suppressing occurrence of arcing and obtaining a high quality transparent conductive film even when a film is formed by a DC sputtering method using an indium oxide based oxide sintered body containing cobalt of 10 atom% or more as a target.SOLUTION: The oxide sintered body comprises an indium oxide as a principal component, a cobalt oxide and an oxide of a metal element M (M is one or more kinds of metal elements selected from a group consisting of Sn, Ti, W, Zn and Ga). An atomic ratio Co/(In+Co+M) of Co to the total of In, Co and M is 0.1-0.4, and an atomic ratio M/(In+Co+M) of M to the total of In, Co and M is 0-0.12. A cobalt oxide phase having a crystal grain size of 30 μm or less is dispersed in the oxide sintered body, and the cobalt oxide phase is formed of a cobalt monoxide phase. |
