发明名称 金属不純物量の少ない半導体リソグラフィー用共重合体の製造方法及び該共重合体を製造するための重合開始剤の精製方法
摘要 A method for producing a copolymer for semiconductor lithography containing less metal impurities, and a method for purifying a polymerization initiator for production of the copolymer, are provided. The method for purifying a polymerization initiator to be used for production of a polymer includes a filtering step wherein a solution of a polymerization initiator dissolved in an organic solvent is allowed to pass through a filter having a nominal pore size of not more than 1.0 μm, to reduce the sodium content of the polymerization initiator solution to not more than 300 ppb with respect to the weight of the polymerization initiator. Further, the method for producing a copolymer for semiconductor lithography includes a polymerization step wherein the polymer for semiconductor lithography is synthesized by a radical polymerization reaction in the presence of a polymerization initiator purified by the above purification method.
申请公布号 JP5905207(B2) 申请公布日期 2016.04.20
申请号 JP20110095415 申请日期 2011.04.21
申请人 丸善石油化学株式会社 发明人 鈴 木 陽 司
分类号 C08F4/04;C08F220/10;G03F7/039;H01L21/027 主分类号 C08F4/04
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