| 摘要 |
A semiconductor device and a manufacturing method therefor are disclosed. The semiconductor device comprises: a semiconductor device active region (1); an electrode shape controlling layer (2) disposed on the semiconductor device active region (1), the electrode shape controlling layer (2) containing aluminum, the content of aluminum being reduced in a direction from bottom to up from the semiconductor device active region (1), an electrode region being disposed on the electrode shape controlling layer (2), a groove extended toward the semiconductor device active region (1) and penetrating through the electrode shape controlling layer (2) longitudinally being disposed in the electrode region, all or part of a side surface of the groove having a shape of one of a straight slope, a concave slope protruded away from a central line of the groove and a convex slope protruded toward the central line of the groove; and an electrode (5) disposed in the groove in the electrode region entirely or partially, the electrode (5) having a shape matching with the shape of the groove, a bottom portion of the electrode (5) being contacted with the semiconductor device active region (1). By controlling the shape of the electrode (5), the electrical field intensity near the electrode (5) is changed and performances of the semiconductor device, such as breakdown voltage and reliability, are improved. |
