发明名称 NONVOLATILE MEMORY
摘要 A memory cell for storing 1-bit data is formed by using at least two memory elements in the OTP type nonvolatile memory using a memory element that have two states and can transit only in one direction. In the OTP type nonvolatile memory using a memory element that has two states of an H state (a first state) and an L (a second state) state (hereinafter simply referred to as H and L) and can electrically transit only in one direction from L to H, a memory cell for storing 1-bit data is formed by using two or more memory elements.
申请公布号 EP1714294(B1) 申请公布日期 2016.04.20
申请号 EP20050710153 申请日期 2005.02.04
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KATO, KIYOSHI
分类号 G11C16/02;G11C29/00;G11C16/04;G11C16/22;H01L21/02;H01L21/8247;H01L27/115;H01L27/12;H01L29/786;H01L29/788;H01L29/792 主分类号 G11C16/02
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