发明名称 |
NONVOLATILE MEMORY |
摘要 |
A memory cell for storing 1-bit data is formed by using at least two memory elements in the OTP type nonvolatile memory using a memory element that have two states and can transit only in one direction. In the OTP type nonvolatile memory using a memory element that has two states of an H state (a first state) and an L (a second state) state (hereinafter simply referred to as H and L) and can electrically transit only in one direction from L to H, a memory cell for storing 1-bit data is formed by using two or more memory elements. |
申请公布号 |
EP1714294(B1) |
申请公布日期 |
2016.04.20 |
申请号 |
EP20050710153 |
申请日期 |
2005.02.04 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KATO, KIYOSHI |
分类号 |
G11C16/02;G11C29/00;G11C16/04;G11C16/22;H01L21/02;H01L21/8247;H01L27/115;H01L27/12;H01L29/786;H01L29/788;H01L29/792 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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