发明名称 MAGNETIC STATE ELEMENT AND CIRCUITS
摘要 Described is an apparatus, for spin state element device, which comprises: a variable resistive magnetic (VRM) device to receive a magnetic control signal to adjust resistance of the VRM device; and a magnetic logic gating (MLG) device, coupled to the VRM device, to receive a magnetic logic input and perform logic operation on the magnetic logic input and to drive an output magnetic signal based on the resistance of the VRM device. Described is a magnetic demultiplexer which comprises: a first VRM device to receive a magnetic control signal to adjust resistance of the first VRM; a second VRM device to receive the magnetic control signal to adjust resistance of the second VRM device; and an MLG device, coupled to the first and second VRM devices, the MLG device having at least two output magnets to output magnetic signals based on the resistances of the first and second VRM devices.
申请公布号 EP2831881(A4) 申请公布日期 2016.04.20
申请号 EP20120873104 申请日期 2012.03.29
申请人 INTEL CORPORATION 发明人 MANIPATRUNI, SASIKANTH;NIKONOV, DMITRI E.;YOUNG, IAN A.
分类号 G11C11/15;G06F1/00;G11C5/14 主分类号 G11C11/15
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