发明名称 基板処理装置、基板処理方法及び基板温度の設定可能帯域の変更方法
摘要 A substrate processing apparatus includes: a processing chamber; a support base; an electrostatic chuck; a chiller; a first channel; a second channel; a bypass channel; and a flow rate control valve. The first channel connects the chiller and a coolant entrance of the support base and the second channel connects the chiller and a coolant exit of the support base. The bypass channel branches from a midway of the first channel and is connected to a midway of the second channel. The flow rate control valve controls a flow rate of coolant flowing through the bypass channel.
申请公布号 JP5905735(B2) 申请公布日期 2016.04.20
申请号 JP20120035308 申请日期 2012.02.21
申请人 東京エレクトロン株式会社 发明人 眞壁 暁之;岡城 武敏
分类号 H01L21/683;B23Q3/15;H01L21/3065;H02N13/00 主分类号 H01L21/683
代理机构 代理人
主权项
地址