| 摘要 |
This disclosure provides an embodiment of a FinFET device. This device is provided with a fin structure arranged on a substrate. The fin structure is provided with a semiconductor oxide layer arranged on the substrate and having an upper surface toward the side opposite to the substrate, a first semiconductor material layer arranged over the semiconductor oxide layer and apart from the layer and having an upper surface toward the side opposite to the substrate and a facing bottom surface facing the substrate, and a dielectric side wall spacer arranged along a side wall of the semiconductor oxide layer and extending to the first semiconductor material layer. The device is provided with a gate dielectric layer arranged on the fin structure and a gate electrode layer arranged on the gate dielectric layer. The gate electrode layer extends between the upper surface of the semiconductor oxide layer and the bottom surface of the first semiconductor material layer. |
