| 摘要 |
PROBLEM TO BE SOLVED: To suppress occurrence of warpage or distortion in a wafer bonded to a support substrate.SOLUTION: A bonding device 30 for bonding a processed wafer W and a support wafer S includes a processing container 100 the interior of which can be sealed, a bonding section 113 for bonding the processed wafer W and support wafer S by pressing while adjusting to a predetermined temperature, and a delivery arm 120 as a superposed substrate temperature control section for adjusting the temperature of the support wafer S before bonding and the processed wafer W before bonding, and adjusting the temperature of a superposed wafer T bonded in the bonding section 113 to normal temperature of 50°C or less. The bonding section 113 and the delivery arm 120 are arranged in the processing container 100. |
