ＡＬＤ／ＣＶＤプロセスにおけるＧＳＴ膜のための前駆体

摘要

A process of making an antimony-containing or bismuth containing film such as a germanium-antimony-tellurium alloy (GST) or germanium-bismuth-tellurium (GBT) film uses a process selected from atomic layer deposition and chemical vapor deposition. A silylantimony precursor or silylbismuth precursor is used as a source of antimony or bismuth.