| 摘要 |
The present invention provides chemical-mechanical polishing (CMP) methods for polishing a platinum and/or ruthenium containing substrate, and compositions suitable for use in the methods. The polishing compositions used with the methods of the invention, which contain alumina and at least one additive selected from the group consisting of a suppressor, a complexing agent, and an amino compound, allow for platinum and ruthenium to be polished. The methods of the invention provide for tailoring the relative removal rates of platinum, ruthenium, silicon oxide and silicon nitride. |
