发明名称 Power semiconductor switch circuit
摘要 The invention relates to a power semiconductor circuit comprising at least two power semiconductor switches electrically connected in parallel, a wiring manipulation system and a manipulation circuit. The wiring manipulation system comprises first, second, third and fourth electrical connection points. The first electrical connection point and the third electrical connection point are electrically connected to the control interfaces of the power semiconductor switches. The second electrical connection point and the fourth electrical connection point are electrically connected to the second load current interfaces of the power semiconductor switches. A diode is respectively and electrically coupled between the switch-on point and the control interface of each power semiconductor switch. The manipulation circuit is configured to generate a first potential difference between the first switch-on point and the second switch-on point so as to switch on the power semiconductor switches, and generate a second potential difference between the third switch-on point and the fourth switch-on point so as to switch off the power semiconductor switches.
申请公布号 EP2824837(B1) 申请公布日期 2016.04.20
申请号 EP20140165369 申请日期 2014.04.22
申请人 SEMIKRON ELEKTRONIK GMBH & CO. KG 发明人 MÜHLHÖFER, ALEXANDER;SCHMIDT, JÜRGEN
分类号 H03K17/12;H02M1/088;H03K17/16 主分类号 H03K17/12
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