| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a charged particle beam lithography apparatus and a charged particle beam lithography method capable of suppressing sticking of contaminants to an aperture. <P>SOLUTION: An electron beam lithography apparatus includes a first aperture 17 for turning an electron beam 54 emitted from an electron gun 6 to a prescribed shape, and a second aperture 18 for turning the electron beam which has transmitted through the first aperture 17 into a shot of a desired shape and dimension. The apparatus includes a deflection control part 30 for deflecting the electron beam to a plurality of positions shielded by the second aperture 18 at the periphery of the opening of the second aperture 18 when actual drawing is not performed so as to radiate a prescribed irradiation amount of the electron beam to the respective positions. The deflection control part 30 acquires information from a stage driving circuit 4, determines whether or not the actual drawing is being performed, and determines a deflection position of the electron beam 54 on the basis of information from a position circuit 5. <P>COPYRIGHT: (C)2013,JPO&INPIT |
