| 摘要 |
Embodiments of the present invention provide a method for producing a multi-gate fin field-effect transistor, including: forming a channel layer and a gate medium layer on a substrate; forming an amorphous silicon layer on the substrate, and etching the amorphous silicon layer by using an etching process, to form at least one fin; forming, by using an epitaxial growth process, a first protective layer from both sides to the middle of the substrate along a length direction of the at least one fin until a groove is formed in a middle location along the length direction of the at least one fin; forming a gate electrode layer on the substrate, performing planarization processing on the gate electrode layer to expose the first protective layer, and etching away the first protective layer by using an etching process, so as to form a gate electrode; and forming a source electrode and a drain electrode on the substrate. According to the embodiments of the present invention, a gate electrode of a FinFET is formed by using an epitaxial growth process and an etching process, so as to implement alignment of the gate electrode and a central location, of a fin, along a length direction, solve a problem of imbalance of series resistance between a drain electrode and a source electrode, and ensure component performance of the FinFET. |
