Light emitting device with improved current spreading performance and lighting apparatus including the same

摘要

Disclosed herein is a light emitting device exhibiting improved current spreading. The disclosed light emitting device includes a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type and second conductivity type semiconductor layers, a first electrode disposed on the first conductivity type semiconductor layer, and a second electrode disposed on the second conductivity type semiconductor layer. The light emitting structure includes a mesa etching region where the second conductivity type semiconductor layer, active layer, and first conductivity type semiconductor layer are partially etched, thereby exposing a portion of the first conductivity type semiconductor layer. The first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer. A first electrode layer is disposed between the second conductivity type semiconductor layer and the second electrode. A second electrode layer is disposed between portions of the first electrode layer spaced from each other at opposite sides of the mesa etching region.

主权项

1. A light emitting device, comprising:
a light emitting structure comprising a first conductivity type semiconductor layer, a second conductivity type semiconductor layer, and an active layer disposed between the first conductivity type semiconductor layer and the second conductivity type semiconductor layer; a first electrode disposed on the first conductivity type semiconductor layer; and a second electrode disposed on the second conductivity type semiconductor layer, wherein the light emitting structure comprises a mesa etching region where the second conductivity type semiconductor layer, the active layer, and the first conductivity type semiconductor layer are etched, thereby exposing a portion of the first conductivity type semiconductor layer in the mesa etching region, and the first electrode is disposed on the exposed portion of the first conductivity type semiconductor layer in the mesa etching region, wherein a first electrode layer is disposed between the second conductivity type semiconductor layer and the second electrode, and a plurality of second electrode layer units is disposed between portions of the first electrode layer spaced from each other at opposite sides of the mesa etching region, and wherein opposite ends of the second electrode layer are disposed directly on the first electrode layer.