发明名称 |
Leadless package type power semiconductor module |
摘要 |
There is provided a leadless package type power semiconductor module. According to an exemplary embodiment of the present disclosure, the leadless package type power semiconductor module includes: connection terminals of a surface mounting type (SMT) formed at edges at which respective sides of four surfaces meet each other; a first mounting area connected to the connection terminals through a bridge to be disposed at a central portion thereof and mounted with power devices or control ICs electrically connected to the power devices to control the power devices; and second mounting areas formed between the connection terminals and mounted with the power devices or the control ICs, wherein the first mounting area is disposed at a different height from the second mounting area through the bridge to generate a phase difference from the second mounting area. Therefore, it is possible to implement a high-integration, high-performance, and small power semiconductor module by applying a three-dimensional structure deviating from a one-dimensional flat structure. |
申请公布号 |
US9318423(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201414572763 |
申请日期 |
2014.12.16 |
申请人 |
Samsung Electro-Mechanics Co., Ltd. |
发明人 |
Kim Kwang Soo;Um Kee Ju;Lee Suk Ho;Chae Joon Seok |
分类号 |
H01L23/495;H01L23/02;H01L23/48;H01L23/52;H01L29/40;H01L23/00;H01L25/18;H01L23/31 |
主分类号 |
H01L23/495 |
代理机构 |
Ladas & Parry, LLP |
代理人 |
Ladas & Parry, LLP |
主权项 |
1. A leadless package type power semiconductor module, comprising:
connection terminals of a surface mounting type (SMT) formed at edges at which respective sides of four surfaces meet each other; a first mounting area connected to the connection terminals through a bridge to be disposed at a central portion thereof and mounted with power devices or control ICs electrically connected to the power devices to control the power devices; and second mounting areas formed between the connection terminals and mounted with the power devices or the control ICs, wherein the first mounting area is disposed at a different height from the second mounting area through the bridge to generate a phase difference from the second mounting area. |
地址 |
Gyeonggi-Do KR |