发明名称 Leadless package type power semiconductor module
摘要 There is provided a leadless package type power semiconductor module. According to an exemplary embodiment of the present disclosure, the leadless package type power semiconductor module includes: connection terminals of a surface mounting type (SMT) formed at edges at which respective sides of four surfaces meet each other; a first mounting area connected to the connection terminals through a bridge to be disposed at a central portion thereof and mounted with power devices or control ICs electrically connected to the power devices to control the power devices; and second mounting areas formed between the connection terminals and mounted with the power devices or the control ICs, wherein the first mounting area is disposed at a different height from the second mounting area through the bridge to generate a phase difference from the second mounting area. Therefore, it is possible to implement a high-integration, high-performance, and small power semiconductor module by applying a three-dimensional structure deviating from a one-dimensional flat structure.
申请公布号 US9318423(B2) 申请公布日期 2016.04.19
申请号 US201414572763 申请日期 2014.12.16
申请人 Samsung Electro-Mechanics Co., Ltd. 发明人 Kim Kwang Soo;Um Kee Ju;Lee Suk Ho;Chae Joon Seok
分类号 H01L23/495;H01L23/02;H01L23/48;H01L23/52;H01L29/40;H01L23/00;H01L25/18;H01L23/31 主分类号 H01L23/495
代理机构 Ladas & Parry, LLP 代理人 Ladas & Parry, LLP
主权项 1. A leadless package type power semiconductor module, comprising: connection terminals of a surface mounting type (SMT) formed at edges at which respective sides of four surfaces meet each other; a first mounting area connected to the connection terminals through a bridge to be disposed at a central portion thereof and mounted with power devices or control ICs electrically connected to the power devices to control the power devices; and second mounting areas formed between the connection terminals and mounted with the power devices or the control ICs, wherein the first mounting area is disposed at a different height from the second mounting area through the bridge to generate a phase difference from the second mounting area.
地址 Gyeonggi-Do KR