Method for fabricating semiconductor device including nitrided gate insulator

摘要

A method of fabricating a semiconductor device includes forming an interface layer on a substrate, forming a first gate insulating layer having a first dielectric constant on the interface layer, forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer, annealing the substrate, nitriding a resultant of the annealed first and second gate insulating layers to form a nitrided gate insulator, forming a work function control layer on the nitride gate insulator, and forming a metal gate electrode on the work function control layer. At least one of the work function control layer and the metal gate electrode is of or includes aluminum (Al).

主权项

1. A method of fabricating a semiconductor device, the method comprising:
forming an interface layer on a substrate; forming a first gate insulating layer having a first dielectric constant on the interface layer; forming a second gate insulating layer having a second dielectric constant smaller than the first dielectric constant on the first gate insulating layer; annealing the substrate; nitriding the first and second gate insulating layers to form a nitride gate insulator; forming a work function control layer on the nitrided gate insulator; and forming a metal gate electrode on the work function control layer, and wherein at least one of the work function control layer and the metal gate electrode comprises aluminum (Al).