发明名称 |
Methods for monitoring source symmetry of photolithography systems |
摘要 |
A method for monitoring the source symmetry of a photolithography system is provided. The method includes providing a first reticle; and providing a second reticle. The method also includes forming first bottom overlay alignment marks on a first wafer using the first reticle; and forming first top overlay alignment marks on the first bottom overlay alignment marks using the second reticle. Further, the method includes forming second bottom overlay alignment marks on a second wafer using the first reticle; and forming second top overlay alignment marks on the second bottom overlay alignment marks using the second reticle. Further, the method also include measuring a first overlay shift; measuring a second overlay shift; and obtaining an overlay shift caused by the source asymmetry based on the first overlay shift and the second overlay shift. |
申请公布号 |
US9316925(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201314078836 |
申请日期 |
2013.11.13 |
申请人 |
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION |
发明人 |
Cai Boxiu |
分类号 |
G03B27/32;G03F7/20 |
主分类号 |
G03B27/32 |
代理机构 |
Anova Law Group, PLLC |
代理人 |
Anova Law Group, PLLC |
主权项 |
1. A method for monitoring a source symmetry of a photolithography system, comprising:
providing a first reticle having a plurality of first mark patterns and a plurality of second mark patterns; providing a second reticle also having a plurality of the first mark patterns and a plurality of the second mark patterns; forming first bottom overlay alignment marks on a first wafer using the first reticle; forming first top overlay alignment marks on the first bottom overlay alignment marks using the second reticle; forming second bottom overlay alignment marks on a second wafer using the second reticle; forming second top overlay alignment marks on the second bottom overlay alignment marks using the first reticle; measuring a first overlay shift of the first top overlay alignment marks and the first bottom overlay alignment marks; measuring a second overlay shift of the second top overlay alignment marks and the second bottom overlay alignment marks; and obtaining an overlay shift caused by the source asymmetry based on the first overlay shift and the second overlay shift. |
地址 |
Shanghai CN |