| 摘要 |
A light-emitting diode and manufacturing method, including a flat portion and a mesa structure. An inclined side surface is formed by wet etching such that a cross-sectional area of the mesa structure is continuously reduced toward a top surface. A protective film covers the flat portion, the inclined side surface, and a peripheral region of the top surface of the mesa structure. The protective film includes an electrical conduction window arranged around a light emission hole and from which a compound semiconductor layer is exposed. A continuous electrode film contacts the exposed compound semiconductor layer, covers the protective film formed on the flat portion, and has the light emission hole on the top surface. A transparent conductive film is formed between a reflecting layer and the layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window. |
| 主权项 |
1. A light-emitting diode that outputs light from a light emission hole to the outside, comprising:
a reflecting layer that consists of metal; and a compound semiconductor layer that sequentially includes an active layer and a contact layer; on a supporting substrate in this order, wherein a flat portion and a mesa structure portion including an inclined side surface and a top surface are provided in an upper part of the light-emitting diode, wherein at least a part of the flat portion and at least a part of the mesa structure portion are sequentially covered with a protective film and an electrode film, the mesa structure portion includes at least a portion of the active layer, the inclined side surface is formed by wet etching, a cross-sectional area of the mesa structure portion in a horizontal direction is continuously reduced toward the top surface, the protective film covers at least a part of the flat portion, the inclined side surface of the mesa structure portion, and a peripheral region of the top surface of the mesa structure portion and the protective film includes an electrical conduction window which is provided inside the peripheral region in plan view and is arranged around the light emission hole and from which a portion of a surface of the compound semiconductor layer is exposed, the electrode film is a continuous film that comes into contact with the surface of the compound semiconductor layer which is exposed from the electrical conduction window, covers at least a portion of the protective film formed on the flat portion, and has the light emission hole on the top surface of the mesa structure portion, and a transparent conductive film is provided between the reflecting layer and the compound semiconductor layer at a position that corresponds to the electrical conduction window and in a range surrounded by the electrical conduction window in plan view, an ohmic metal portion that consists of AuBe or AuZn and is provided in a peripheral portion of the transparent conductive film which does not overlap the light emission hole in plan view, between the transparent conductive film and the compound semiconductor layer. |
