发明名称 Semiconductor device having dummy cell array
摘要 A semiconductor device is disclosed. The semiconductor device includes a plurality of dummy gate lines parallel to each other in a first direction and extending in a second direction that is orthogonal to the first direction; a plurality of first dummy filling patterns between the plurality of dummy gate lines, the first dummy filling patterns parallel to each other in the first direction, and arranged apart from each other in the second direction; a plurality of first dummy vias on the plurality of first dummy filling patterns; and a plurality of first dummy wiring lines connected to the plurality of first dummy vias, the first dummy vias extending in the second direction, and parallel to each other in the first direction.
申请公布号 US9318477(B2) 申请公布日期 2016.04.19
申请号 US201414493526 申请日期 2014.09.23
申请人 Samsung Electronics Co., Ltd. 发明人 Lee Ji-myoung;Song Young-soo;Lee Bo-young;Lee Jun-min
分类号 H01L27/02;H01L21/8238;G11C7/14 主分类号 H01L27/02
代理机构 Onello & Mello, LLP 代理人 Onello & Mello, LLP
主权项 1. A semiconductor device comprising: a plurality of dummy gate lines parallel to each other in a first direction and extending in a second direction that is orthogonal to the first direction; a plurality of first dummy filling patterns between the plurality of dummy gate lines, the first dummy filling patterns parallel to each other in the first direction, and arranged apart from each other in the second direction, the first dummy filling patterns separate from the dummy gate lines; an interlayer insulating layer that insulates the first dummy filling patterns from each other, the first dummy filling patterns formed in the interlayer insulating layer; a plurality of first dummy vias on the plurality of first dummy filling patterns; and a plurality of first dummy wiring lines connected to the first dummy filling patterns through the plurality of first dummy vias, the first dummy wiring lines extending in the second direction, and parallel to each other in the first direction, wherein a center line of each of the plurality of first dummy filling patterns extends along the second direction, and aligns with a center line of a corresponding first dummy wiring line of the plurality of first dummy wiring lines so that the plurality of first dummy filling patterns are constructed, arranged, and aligned with the plurality of first dummy wiring lines extending along the second direction.
地址 KR