Transistor having two metal oxide films and an oxide semiconductor film

摘要

An object is to stabilize electric characteristics of a semiconductor device including an oxide semiconductor to increase reliability. The semiconductor device includes an insulating film; a first metal oxide film on and in contact with the insulating film; an oxide semiconductor film partly in contact with the first metal oxide film; source and drain electrodes electrically connected to the oxide semiconductor film; a second metal oxide film partly in contact with the oxide semiconductor film; a gate insulating film on and in contact with the second metal oxide film; and a gate electrode over the gate insulating film.

主权项

1. A semiconductor device comprising:
a first metal oxide film over a substrate; an oxide semiconductor film over and in contact with the first metal oxide film; source and drain electrodes in contact with the oxide semiconductor film; a second metal oxide film over and in contact with the oxide semiconductor film; a first insulating film over and in contact with the second metal oxide film; and a gate electrode over the first insulating film, wherein the oxide semiconductor film is surrounded by the first metal oxide film and the second metal oxide film in a channel width direction, and wherein the source and drain electrodes are provided between the oxide semiconductor film and the second metal oxide film.