| 发明名称 | Solid state imaging device having a shared pixel structure and electronic apparatus | ||
| 摘要 | A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor. | ||
| 申请公布号 | US9319646(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201414308921 | 申请日期 | 2014.06.19 |
| 申请人 | SONY CORPORATION | 发明人 | Masagaki Atsushi |
| 分类号 | H04N5/335;H04N9/04;H04N5/3745 | 主分类号 | H04N5/335 |
| 代理机构 | Sheridan Ross P.C. | 代理人 | Sheridan Ross P.C. |
| 主权项 | 1. A solid state imaging device comprising: a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors; wherein all of the shared pixel transistors are intensively arranged in only one predetermined pixel out of the commonly used plurality of the pixels, wherein the one predetermined pixel is one of R or B. | ||
| 地址 | Tokyo JP | ||