CMOS circuit and method for fabricating the same

摘要

A semiconductor device includes a semiconductor substrate and a gate insulation layer formed over the semiconductor substrate. A gate electrode is formed over the gate insulation layer. The gate electrode includes a silicon-containing electrode including a dopant, a capturing material to capture the dopant, and an activation control material to control an activation of the dopant.

主权项

1. A method for fabricating a semiconductor device, the method comprising:
forming a gate insulation layer over a semiconductor substrate; forming an undoped silicon-containing layer over the gate insulation layer; forming a doped silicon-containing layer by doping the undoped silicon-containing layer with a dopant; and forming a gate electrode by etching the doped silicon-containing layer, wherein the undoped silicon-containing layer includes a capturing material and an activation control material, wherein the capturing material includes carbon to capture the dopant, wherein activation control material includes germanium to control an activation of the dopant, wherein the undoped silicon-containing layer has a multi-layer structure, comprising:
a first silicon-containing layer including the capturing material; anda second silicon-containing layer including the activation control material and stacked over the first silicon-containing layer,wherein the first silicon-containing layer does not include the activation control material.