发明名称 Process for producing FePt-based sputtering target
摘要 A process for producing an FePt-based sputtering target includes adding C powder containing unavoidable impurities and metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities so that the C powder and the metal oxide powder are contained to satisfy: 0<α≦20;10≦β<40; and20≦α+β≦40,where α and β represent contents of the C powder and the metal oxide powder by vol %, respectively, based on a total amount of the FePt-based alloy powder, the C powder, and the metal oxide powder, followed by mixing the FePt-based alloy powder, the C powder, and the metal oxide powder to produce a powder mixture.
申请公布号 US9314845(B2) 申请公布日期 2016.04.19
申请号 US201414328106 申请日期 2014.07.10
申请人 TANAKA KIKINZOKU KOGYO K.K. 发明人 Miyashita Takanobu;Goto Yasuyuki;Yamamoto Takamichi;Kushibiki Ryousuke;Aono Masahiro;Nishiura Masahiro
分类号 C23C14/24;B22F3/12;B22F9/08;C23C14/34;C22C1/05;C22C5/04;C22C32/00;G11B5/851;B22F9/04;C22C1/04;C22C1/10;H01J37/34;C23C14/06;C22C38/00;C22C38/16 主分类号 C23C14/24
代理机构 Oliff PLC 代理人 Oliff PLC
主权项 1. A process for producing an FePt-based sputtering target, comprising: adding C powder containing unavoidable impurities and metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities so that the C powder and the metal oxide powder are contained to satisfy: 0<α≦20;10≦β<40; and20≦α+β≦40, where α and β represent contents of the C powder and the metal oxide powder by vol %, respectively, based on a total amount of the FePt-based alloy powder, the C powder, and the metal oxide powder, followed by mixing the FePt-based alloy powder, the C powder, and the metal oxide powder to produce a powder mixture; and molding the produced powder mixture while the powder mixture is heated under pressure.
地址 Tokyo JP