Fabrication of graphene electrodes on diamond substrate

摘要

One or more graphene layers may be formed on a diamond substrate by reforming sp3 hybrid orbitals of C—C bonds in a portion of the diamond substrate into sp2 hybrid orbitals. Forming sp2 hybrid orbitals may be achieved by ion bombardment to damage the sp3 hybrid orbitals of the C—C bonds in the diamond substrate and subsequent heating of the diamond substrate to allow annealing to take place. If more than ten graphene layers are formed on the diamond substrate, the graphene layers may be reduced to ten or less graphene layers. Removal of the graphene layers may be performed by peeling a desired number of layers using an adhesive material.

主权项

1. A method of forming graphene on a synthetic diamond substrate, comprising:
providing a synthetic diamond substrate selected from the group consisting of single crystal diamond, ultrananocrystal diamond, and nanocrystal diamond; defining a graphitization pattern on the synthetic diamond substrate prior to ion bombardment using photolithography; treating a portion of the synthetic diamond substrate by ion bombardment, the ion bombardment damaging sp3 bonds of the carbon atoms in the treated substrate portion, wherein damage to the sp3 bonds of the carbon atoms by ion bombardment exceeds a threshold defect density of 1×1022 vacancy/cm3; heating the synthetic diamond substrate at an annealing temperature for about two minutes to about ten minutes to permit annealing to occur in the treated portion of the synthetic diamond substrate, wherein the annealing temperature is from about 600° C. to about 900° C. whereby the treated portion of the synthetic diamond substrate is transformed into one or more graphene layers; and reducing the one or more of graphene layers to ten or less graphene layers if the number of graphene layers formed exceeds ten.