发明名称 Secure spin torque transfer magnetic random access memory (STTMRAM)
摘要 A magnetic memory device includes a main memory made of magnetic memory, the main memory and further includes a parameter area used to store parameters used to authenticate data. Further, the magnetic memory device has parameter memory that maintains a protected zone used to store protected zone parameters, and an authentication zone used to store authentication parameters, the protection zone parameters and the authentication parameters being associated with the data that requires authentication. Upon modification of any of the parameters stored in the parameter memory by a user, a corresponding location of the parameter area of the main memory is also modified.
申请公布号 US9319387(B2) 申请公布日期 2016.04.19
申请号 US201514867881 申请日期 2015.09.28
申请人 Avalanche Technology, Inc. 发明人 Nemazie Siamack;Van Le Ngon
分类号 H04L9/08;H04L29/06;G11C11/16;H04W12/04 主分类号 H04L9/08
代理机构 代理人 Imam Maryam;Yen Bing K.
主权项 1. A mobile device comprising: wireless device for connection to wireless networks; a first memory system including more than one type of memory, a type of memory of the first memory system including non-volatile memory with a parameter area, the parameter area configured to store parameters used to authenticate access to certain areas of the non-volatile memory; and a first memory located externally to the non-volatile memory and configured to maintain a first area used to store protected zone parameters, the first memory further configured to maintain a second area used to store authentication parameters including an authentication password (PWD), the first memory further configured to maintain a third area used to store crypto parameters, the crypto parameters including a key used to decrypt the encrypted PWD, the encrypted PWD employed to authorize access to the protected area by decryption of the encrypted PWD using the key and a result of comparison of the decrypted PWD with the authentication PWD, wherein upon a user updating a parameter of the first memory, a corresponding parameter of the parameter area is also updated.
地址 Fremont CA US