Ion implantation and annealing for thin film crystalline solar cells

摘要

A back contact back junction thin-film solar cell is formed on a thin-film semiconductor solar cell. Preferably the thin film semiconductor material comprises crystalline silicon. Base regions, emitter regions, and front surface field regions are formed through ion implantation and annealing processes.

主权项

1. A method for making base regions in a thin-film crystalline silicon substrate, the method comprising:
forming openings in a dielectric layer for base contacts on a thin-film crystalline silicon substrate, wherein said openings form a patterned dielectric layer; implanting ions of an dopant element in said thin-film crystalline silicon substrate within said patterned dielectric layer to selectively introduce said dopant element at said base contacts, said patterned dielectric used as an ion implantation mask; activating said implanted dopant element to form electrically active doped base contacts; forming emitter contacts on said thin-film crystalline silicon substrate; and forming metallization contacts on said emitter contacts and said base contacts.