发明名称 Optoelectronic semiconductor chip and method for producing the latter
摘要 A semiconductor chip with a layer stack includes a first semiconductor layer sequence and a second semiconductor layer sequence. The first semiconductor layer sequence includes a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and an active zone arranged therebetween. The second semiconductor layer sequence includes the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone arranged therebetween.
申请公布号 US9318651(B2) 申请公布日期 2016.04.19
申请号 US201214352575 申请日期 2012.10.08
申请人 OSRAM Opto Semiconductors GmbH 发明人 Avramescu Adrian Stefan;Rode Patrick;Strassburg Martin
分类号 H01L29/18;H01L33/06;H01L33/30;H01L33/62;H01L27/15;H01L33/08;H01L33/38;H01L33/00 主分类号 H01L29/18
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. An optoelectronic semiconductor chip having a layer stack comprising: a first semiconductor layer sequence comprising a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type and a first active zone being arranged between the first semiconductor region and the second semiconductor region, the first active zone being configured to generate a first electromagnetic radiation; and a second semiconductor layer sequence comprising the second semiconductor region of the second conductivity type, a third semiconductor region of the first conductivity type and a second active zone being arranged between the second semiconductor region and the third semiconductor region, the second active zone being configured to generate a second electromagnetic radiation, wherein the second semiconductor region is contacted through two first openings which are spaced apart from one another and extend from a surface of the first semiconductor region remote from the first active zone as far as into the second semiconductor region, wherein a first electrical contact layer is arranged in the two first openings for forming two first through vias, and wherein the first electrical contact layer covers the first semiconductor region so that the two first through vias are electrically connected to each other by the first electrical contact layer covering the first semiconductor region.
地址 Regensburg DE