Patterns of a semiconductor device and method of manufacturing the same

摘要

A semiconductor device including a plurality of active patterns, a plurality of first isolation layer patterns and a plurality of second isolation layer patterns may be provided. In particular, the active patterns may be arranged both in a first direction and in a second direction, and may protrude from a substrate and have a length in the first direction. The first isolation layer patterns may fill a first space, the first space provided between the active patterns and arranged in the first direction, and support two opposing sidewalls of neighboring active patterns. The second isolation layer patterns may fill a second space between the active patterns and the first isolation layer patterns. Accordingly, the active patterns of the semiconductor device may not collapse or incline because the first isolation layer patterns support the active patterns.

主权项

1. A semiconductor device, comprising:
a plurality of active patterns arranged both in a first direction and in a second direction, the active patterns protruding from a substrate and having a length in the first direction; a plurality of first isolation layer patterns filling first spaces, the first spaces between the active patterns and arranged in the first direction, the first isolation layer patterns supporting two opposing sidewalls of neighboring active patterns in the first direction, the first isolation layer patterns having top surfaces substantially coplanar with top surfaces of the active patterns; and a plurality of second isolation layer patterns filling second spaces between the active patterns and the first isolation layer patterns.