| 发明名称 | Zinc oxide sputtering target and method for producing same | ||
| 摘要 | Provided is a zinc oxide sputtering target, which can effectively suppress the occurrence of break or crack in the target during sputtering to enable production of a zinc oxide transparent conductive film with high productivity. The zinc oxide sputtering target is composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more. | ||
| 申请公布号 | US9318307(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201414305267 | 申请日期 | 2014.06.16 |
| 申请人 | NGK Insulators, Ltd. | 发明人 | Yoshikawa Jun;Imai Katsuhiro;Kondo Koichi |
| 分类号 | H01J37/00;H01J37/34;C04B35/453;C23C14/08;C23C14/34;B32B18/00;C04B35/626;C04B35/634;C04B35/638;C04B37/02;C01G9/02;C04B35/64;C04B111/00 | 主分类号 | H01J37/00 |
| 代理机构 | Burr & Brown, PLLC | 代理人 | Burr & Brown, PLLC |
| 主权项 | 1. A zinc oxide sputtering target composed of a zinc oxide sintered body comprising zinc oxide crystal grains, wherein the zinc oxide sputtering target has a sputter surface having a (100) crystal orientation degree of 50% or more. | ||
| 地址 | Nagoya JP | ||