发明名称 |
Programming nonvolatile memory based on statistical analysis of charge level distributions of memory cells |
摘要 |
A system including a read module, a delay buffer, and a least mean square module. The read module is configured to read charge levels of memory cells of a nonvolatile memory and to generate read signals based on the charge levels of the memory cells of the nonvolatile memory. The delay buffer is configured to delay the read signals and to generate delayed read signals. The least mean square module is configured to generate mean values of the charge levels used to program the memory cells based on (i) differences between the read signals and the delayed read signals and (ii) a scaling factor. The scaling factor is based on variations in the charge levels due to cycling of the memory cells of the nonvolatile memory. |
申请公布号 |
US9318223(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201414172199 |
申请日期 |
2014.02.04 |
申请人 |
Marvell World Trade LTD. |
发明人 |
Wu Zining;Yang Xueshi |
分类号 |
G06F11/00;G11C29/50;G11C11/56;G11C16/26;G06F11/10;G06F11/14 |
主分类号 |
G06F11/00 |
代理机构 |
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代理人 |
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主权项 |
1. A system comprising:
a read module configured to
read charge levels of memory cells of a nonvolatile memory, andgenerate read signals based on the charge levels of the memory cells of the nonvolatile memory; a delay buffer configured to
delay the read signals, andgenerate delayed read signals; and a least mean square module configured to
generate mean values of the charge levels used to program the memory cells based on (i) differences between the read signals and the delayed read signals and (ii) a scaling factor,wherein the scaling factor is based on variations in the charge levels due to cycling of the memory cells of the nonvolatile memory. |
地址 |
St. Michael BB |