MRAM wtih metal gate write conductors

摘要

In one embodiment of the invention, there is provided a magnetic random access (MRAM) device. The device comprises a plurality of MRAM cells, wherein each MRAM cell comprises a magnetic bit, and write conductors defined by conductors patterned in a second metal layer above the magnetic bit; and a gate formed below the magnetic bit between a source and a drain; and addressing circuits to address the MRAM cells.

主权项

1. A magnetic random access memory (MRAM) cell, comprising:
a source and a drain formed in a substrate; a read/write gate electrode formed on the substrate between the source and drain and configured to operate as both a read word line electrode and a write word line electrode; a drain contact stud connected to the drain; a source lead connected to the source; a read metal lead of a read metal layer formed above the read/write gate electrode, drain contact, and source lead, wherein the read metal lead couples the drain contact stud to the read/write gate electrode; a magnetic bit formed on the read metal lead and above the read/write gate electrode; and a write conductor of a write metal layer formed above the magnetic bit, wherein the write conductor is coupled to the magnetic bit.