| 发明名称 | Growth substrate and light emitting device comprising the same | ||
| 摘要 | A growth substrate including a substrate having a growth surface including a plurality of steps inclining in a first direction; a first layer disposed on the growth surface, the first layer including an A-plane or an M-plane in an upper part thereof, a plurality of protrusions having an inclined surface on an upper surface thereof, and nitride; a mask layer including a dielectric material and having at least a portion disposed on the protrusions; and a second layer disposed on the mask layer and including nitride. | ||
| 申请公布号 | US9315920(B2) | 申请公布日期 | 2016.04.19 |
| 申请号 | US201414319976 | 申请日期 | 2014.06.30 |
| 申请人 | LG ELECTRONICS INC. | 发明人 | Kim Hyunggu;Yuh Hwankuk;Yu Hyosang |
| 分类号 | H01L27/15;H01L29/26;H01L31/12;H01L33/00;C30B29/40;C30B25/18;C30B25/04;H01L21/02;H01L33/16;H01L33/20;H01L33/12 | 主分类号 | H01L27/15 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A growth substrate comprising: a substrate having a growth surface including a plurality of steps inclining in a first direction; a first layer disposed on the growth surface, the first layer including: an A-plane or an M-plane in an upper part thereof,a plurality of protrusions having an inclined surface on an upper surface thereof, andnitride; a mask layer including a dielectric material and having at least a portion disposed on the protrusions; and a second layer disposed on the mask layer and including nitride. | ||
| 地址 | Seoul KR | ||