Contoured showerhead for improved plasma shaping and control

摘要

Semiconductor processing chamber showerheads with contoured faceplates, as well as techniques for producing such faceplates, are provided. Data describing deposition rate as a function of gap distance between a reference showerhead faceplate and a reference substrate may be obtained, as well as data describing deposition rate as a function of location on the substrate when the reference showerhead and the reference substrate are in a fixed arrangement with respect to each other. The two data sets may be used to determine offsets from a reference plane associated with the faceplate that determine a contour profile to be used with the faceplate.

主权项

1. A method comprising:
obtaining first deposition rate data describing first deposition rates, each first deposition rate correlated with a gap distance between a reference showerhead faceplate and a reference substrate during performance of a semiconductor manufacturing process involving a capacitively-coupled plasma, wherein the gap distances correlated with at least two of the first deposition rates are different; obtaining second deposition rate data, the second deposition rate data describing second deposition rates when the reference showerhead faceplate is in a fixed configuration with respect to the reference substrate during the semiconductor manufacturing process involving the capacitively-coupled plasma, the second deposition rates associated with locations distributed across one or more portions of the reference showerhead faceplate during performance of the semiconductor manufacturing process; and determining a contour profile for a contoured showerhead faceplate based on the first deposition rate data and the second deposition rate data.