TEM sample preparation method

摘要

A TEM sample preparation method including: placing a thin sample on a sample holder so that a first side surface of the thin sample which is closer to a desired observation target is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a thin film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the thin sample, to a region of the first side surface that is adjacent to the thin film portion; and performing the etching processing to a portion of the thin sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column.

主权项

1. A TEM sample preparation method comprising:
placing a sample on a sample holder so that a first side surface of the sample, which is closer to a desired observation target inside the sample than a second side surface of the sample is to the observation target, is opposed to a focused ion beam column; setting a processing region, which is to be subjected to etching processing by a focused ion beam so as to form a film portion including the observation target and having a thickness direction substantially parallel to a thickness direction of the sample, to a region of the first side surface that is adjacent to the film portion; and performing etching processing to a portion of the sample extending from the first side surface thereof to a front surface thereof by irradiating the processing region with the focused ion beam from the focused ion beam column, wherein the processing region includes a first irradiation region at the front surface side thereof and a second irradiation region at the film portion side thereof, and wherein an irradiation amount of the focused ion beam is set to be larger in the second irradiation region than in the first irradiation region.