Vertical gallium nitride JFET with gate and source electrodes on regrown gate

摘要

A semiconductor structure includes a GaN substrate with a first surface and a second surface. The GaN substrate is characterized by a first conductivity type and a first dopant concentration. A first electrode is electrically coupled to the second surface of the GaN substrate. The semiconductor structure further includes a first GaN epitaxial layer of the first conductivity type coupled to the first surface of the GaN substrate and a second GaN layer of a second conductivity type coupled to the first GaN epitaxial layer. The first GaN epitaxial layer comprises a channel region. The second GaN epitaxial layer comprises a gate region and an edge termination structure. A second electrode coupled to the gate region and a third electrode coupled to the channel region are both disposed within the edge termination structure.

主权项

1. A method of manufacturing a vertical junction field effect transistor (VJFET), the method comprising:
providing a III-nitride substrate; forming a first III-nitride layer coupled to the substrate, wherein the first III-nitride layer has a first conductivity type; after forming the first III-nitride layer, forming a plurality of gate projections in a second III-nitride layer, wherein the second III-nitride layer has a second conductivity type; after forming the gate projections, forming a plurality of channel regions in the first III-nitride layer, wherein the channel regions are interleaved with the gate projections; and forming a plurality of source regions in a third III-nitride layer, wherein the third III-nitride layer has the first conductivity type, and wherein each of the source regions is coupled to one of the channel regions.