| 摘要 |
A method for opening a barrier film below copper structures in a stack is provided. A pulsed gas is provided into a plasma processing chamber, wherein a step of providing the pulsed gas comprises steps of: providing a pulsed H_2 containing gas and providing a pulsed halogen containing gas. The pulsed H_2 containing gas and the pulsed halogen containing gas are pulsed out of phase, wherein the pulsed H_2 containing gas has an H_2 high flow period and the pulsed halogen containing gas has a halogen containing gas high flow period. The H_2 high flow period is longer than the halogen containing gas high flow period. The pulsed gas is formed into a plasma. The copper structures and the barrier film are exposed to the plasma, which etches the barrier film. In another embodiment, wet and dry cyclical processes may be used. |
