发明名称 |
Self-aligned top contact for MRAM fabrication |
摘要 |
Systems and methods for forming precise and self-aligned top metal contact for a Magnetoresistive random-access memory (MRAM) device include forming a magnetic tunnel junction (MTJ) in a common interlayer metal dielectric (IMD) layer with a logic element. A low dielectric constant (K) etch stop layer is selectively retained over an exposed top surface of the MTJ. Etching is selectively performed through a top IMD layer formed over the low K etch stop layer and the common IMD layer, based on a first chemistry which prevents etching through the low K etch stop layer. By switching chemistry to a second chemistry which precisely etches through the low K etch stop layer, an opening is created for forming a self-aligned top contact to the exposed top surface of the MTJ. |
申请公布号 |
US9318696(B2) |
申请公布日期 |
2016.04.19 |
申请号 |
US201414195566 |
申请日期 |
2014.03.03 |
申请人 |
QUALCOMM INCORPORATED |
发明人 |
Lu Yu;Li Xia;Kang Seung Hyuk;Gu Shiqun |
分类号 |
H01L21/00;H01L43/12;H01L43/08;H01L43/02;H01L27/22 |
主分类号 |
H01L21/00 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A method of forming a top contact for a Magnetoresistive random-access memory (MRAM) device, the method comprising:
forming a magnetic tunnel junction (MTJ) in a common interlayer metal dielectric (IMD) layer; forming a low dielectric constant (K) etch stop layer over an exposed top surface of the MTJ; selectively etching through a top IMD layer formed over the low K etch stop layer and the common IMD layer, based on a first chemistry which prevents etching the low K etch stop layer; and switching chemistry to a second chemistry which precisely etches through the low K etch stop layer, to create an opening for forming a self-aligned top contact to the exposed top surface of the MTJ. |
地址 |
San Diego CA US |