Method for fabricating a damascene self-aligned ferroelectric random access memory (F-RAM) having a ferroelectric capacitor aligned with a three dimensional transistor structure

摘要

A method for a non-volatile, ferroelectric random access memory (F-RAM) device that includes a ferroelectric capacitor aligned with a preexisting structure is described. In one embodiment, the method includes forming an opening in an insulating layer over a contact in a planar surface of a substrate to expose at least a portion of the contact. Next a self-aligned contact (SAC) is formed electrically coupling to the contact, the SAC medially located in the opening and proximal to a sidewall thereof. A ferroelectric spacer is then formed in the opening medially of the SAC, and a top electrode spacer formed in the opening over the insulating cap and medially of the ferroelectric spacer.

主权项

1. A method comprising:
forming an opening in an insulating layer over a contact in a planar surface of a substrate to expose at least a portion of the contact; forming a self-aligned contact (SAC) electrically coupling to the contact, the SAC medially located in the opening and proximal to a sidewall thereof; forming an insulating cap in a lower portion of the opening, the insulating cap on an exposed portion of the contact; forming a ferroelectric spacer in the opening medially of the SAC and on said insulating cap; and forming a top electrode spacer in the opening medially of the ferroelectric spacer and on said insulating cap.