Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates

摘要

Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.

主权项

1. A nitride semiconductor substrate, comprising:
a plurality of seeds formed of a first nitride semiconductor; a plurality of nitride semiconductor dots on the plurality of seeds, the plurality of nitride semiconductor dots having an average size of less than or equal to about 0.8 μm, the nitride semiconductor dots including a second nitride semiconductor that is a different type of material than a material of the first nitride semiconductor; and a nitride semiconductor layer on the nitride semiconductor dots, wherein the plurality of seeds are spaced apart from each other, the first nitride semiconductor is AlN, the second nitride semiconductor is GaN, an average size of the seeds is in a range from about 10 nm to about 100 nm, an average size of two or more of the nitride semiconductor dots is about 0.4 μm to about 0.8 μm, and the nitride semiconductor layer is formed of GaN.