Group III-V device with strain-relieving layers

摘要

According to one exemplary embodiment, a group III-V semiconductor device includes at least one transition layer situated over a substrate. The group III-V semiconductor device further includes a first strain-relieving interlayer situated over the at least one transition layer and a second strain-relieving interlayer situated over the first strain-relieving interlayer. The group III-V semiconductor device further includes a first group III-V semiconductor body situated over the second strain-relieving interlayer. The first and second strain-relieving interlayers comprise different semiconductor materials so as to reduce a strain in the first group III-V semiconductor body. The second strain-relieving interlayer can be substantially thinner than the first strain-relieving interlayer.

主权项

1. A group III-V semiconductor device comprising:
at least one buffer layer situated over a substrate; at least one transition layer situated over said at least one buffer layer, said at least one transition layer and said at least one buffer layer comprising different semiconductor materials; a first strain-relieving interlayer situated over said at least one transition layer and a second strain-relieving interlayer situated over said first strain-relieving interlayer; a first group III-V semiconductor body situated over said second strain-relieving interlayer; said first and second strain-relieving interlayers comprising different semiconductor materials so as to reduce a strain in said first group semiconductor body; said first and second strain-relieving interlayers each having a thickness greater than or substantially equal to 0.01 micrometers, said second strain-relieving interlayer being thicker than said first strain-relieving interlayer.