Copper based nitride liner passivation layers for conductive copper structures

摘要

One illustrative method disclosed herein includes forming a trench/via in a layer of insulating material, forming a barrier layer in the trench/via, forming a copper-based seed layer on the barrier layer, converting at least a portion of the copper-based seed layer into a copper-based nitride layer, depositing a bulk copper-based material on the copper-based nitride layer so as to overfill the trench/via and performing at least one chemical mechanical polishing process to remove excess materials positioned outside of the trench/via to thereby define a copper-based conductive structure. A device disclosed herein includes a layer of insulating material, a copper-based conductive structure positioned in a trench/via within the layer of insulating material and a copper-based silicon or germanium nitride layer positioned between the copper-based conductive structure and the layer of insulating material.

主权项

1. A device, comprising
a layer of insulating material; a copper-based conductive structure positioned in a trench/via within said layer of insulating material; a copper-based silicon or germanium nitride layer positioned between said copper-based conductive structure and said layer of insulating material; a barrier layer positioned between said copper-based silicon or germanium nitride layer and said layer of insulating material; and a copper seed layer positioned between said barrier layer and said copper-based silicon or germanium nitride layer.